RFN6BM2DFHTL
Rohm Semiconductor
Artikelnummer: | RFN6BM2DFHTL |
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Hersteller / Marke: | LAPIS Technology |
Teil der Beschreibung.: | SUPER FAST RECOVERY DIODE (AEC-Q |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.04 |
10+ | $0.93 |
100+ | $0.7249 |
500+ | $0.5988 |
1000+ | $0.4728 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | TO-252 |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 25 ns |
Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | 150°C (Max) |
Befestigungsart | Surface Mount |
Diodenkonfiguration | 1 Pair Common Cathode |
Strom - Sperrleckstrom @ Vr | 10 µA @ 200 V |
Strom - Richt (Io) (pro Diode) | 6A |
Grundproduktnummer | RFN6 |
RFN6BM2DFHTL Einzelheiten PDF [English] | RFN6BM2DFHTL PDF - EN.pdf |
DIODE GEN PURPOSE TO252
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 350V 5A TO252
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
SUPER FAST RECOVERY DIODE : RFN6
DIODE GEN PURP 800V 5A TO220NFM
DIODE GEN PURP 600V 5A TO252
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 600V 5A TO252
DIODE GEN PURP 600V 5A TO220NFM
DIODE GEN PURP 600V 5A TO220NFM
DIODE GEN PURP 800V 5A TO220NFM
CONN N J FLNG MNT 4HOLE
DIODE ARRAY GP 200V 3A TO252
DIODE GEN PURP 350V 5A TO252
SUPER FAST RECOVERY DIODE. RFN6B
2024/10/8
2024/05/10
2024/05/28
2024/03/19
RFN6BM2DFHTLRohm Semiconductor |
Anzahl*
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Zielpreis (USD)
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